The global gallium nitride device market was valued at USD 20.56 billion in 2019 and is projected to reach USD 39.74 billion by 2032, growing from USD 21.18 billion in 2020 at a CAGR of 5.20% during the forecast period (2020–2032). In 2019, North America led the market, accounting for 35.89% of global revenue.

Steady market growth is being driven by increasing demand across key sectors such as telecommunications, automotive, and consumer electronics. GaN devices are preferred for their high efficiency, faster switching speeds, and superior thermal performance compared to traditional silicon components. The adoption of 5G technology, electric vehicles (EVs), and advancements in power electronics are key factors fueling expansion. North America's strong market position is supported by active research and development initiatives, contributing to continuous innovation. Overall, the GaN device market is expected to grow consistently, bolstered by rising investment in advanced semiconductor technologies.

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A list of all the prominent Gallium Nitride Device Market Key Players:

• Infineon Technologies AG (Germany)
• Efficient Power Conversion Corporation. (The U.S.)
• EPISTAR Corporation (Taiwan)
• GaN Systems (Canada)
• MACOM (The U.S.)
• Microsemi (The U.S.)
• Mitsubishi Electric Corporation (Japan)
• NICHIA CORPORATION (Japan)
• Northrop Grumman Corporation (The U.S.)
• NXP Semiconductors. (Netherland)
• Qorvo, Inc (The U.S.)
• Texas Instruments Incorporated. (The U.S.)
• Toshiba Corporation (Japan)