The global gallium nitride device market was valued at USD 20.56 billion in 2019 and is expected to grow from USD 21.18 billion in 2020 to USD 39.74 billion by 2032, exhibiting a CAGR of 5.20% during the forecast period (2020–2032). In 2019, North America led the market, accounting for a 35.89% share.

GaN devices are increasingly favored over traditional silicon components due to their higher efficiency, faster switching speeds, and superior thermal performance. The ongoing adoption of 5G networks, the rising penetration of electric vehicles (EVs), and significant advancements in power electronics are among the key growth drivers.

A list of all the prominent Gallium Nitride Device Market Key Players:

• Infineon Technologies AG (Germany)
• Efficient Power Conversion Corporation. (The U.S.)
• EPISTAR Corporation (Taiwan)
• GaN Systems (Canada)
• MACOM (The U.S.)
• Microsemi (The U.S.)
• Mitsubishi Electric Corporation (Japan)
• NICHIA CORPORATION (Japan)
• Northrop Grumman Corporation (The U.S.)
• NXP Semiconductors. (Netherland)
• Qorvo, Inc (The U.S.)
• Texas Instruments Incorporated. (The U.S.)
• Toshiba Corporation (Japan)

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