The global gallium nitride device market was valued at USD 20.56 billion in 2019 and is expected to increase from USD 21.18 billion in 2020 to USD 39.74 billion by 2032, reflecting a compound annual growth rate (CAGR) of 5.20% from 2020 to 2032. In 2019, North America held the largest share of the gallium nitride device market, accounting for 35.89%.

A list of all the prominent Gallium Nitride Device Market Key Players:

• Infineon Technologies AG (Germany)
• Efficient Power Conversion Corporation. (The U.S.)
• EPISTAR Corporation (Taiwan)
• GaN Systems (Canada)
• MACOM (The U.S.)
• Microsemi (The U.S.)
• Mitsubishi Electric Corporation (Japan)
• NICHIA CORPORATION (Japan)
• Northrop Grumman Corporation (The U.S.)
• NXP Semiconductors. (Netherland)
• Qorvo, Inc (The U.S.)
• Texas Instruments Incorporated. (The U.S.)
• Toshiba Corporation (Japan)

Drivers & Restraints

Expansion of the Telecommunications Sector to Boost Growth

The increasing demand for energy-efficient gallium nitride (GaN) devices is being driven by the rapid expansion of the telecommunications sector. Many internet service providers are now prioritizing lower latency through optical fiber connections, along with enhancing connectivity and network capacity. Additionally, the growing adoption of GaN devices in 5G infrastructure is expected to further accelerate market growth in the coming years. However, the high costs associated with the maintenance and development of gallium nitride devices may pose a challenge to this growth.