The global gallium nitride device market was valued at USD 20.56 billion in 2019 and is projected to grow from USD 21.18 billion in 2020 to USD 39.74 billion by 2032, exhibiting a compound annual growth rate (CAGR) of 5.20% during the forecast period from 2020 to 2032. In 2019, North America led the market, accounting for a significant 35.89% share, driven by strong adoption of GaN technologies in high-frequency, power, and RF applications.

The global gallium nitride (GaN) device market has experienced steady growth in recent years, driven by increasing demand for high-efficiency, high-performance semiconductor solutions across various applications such as power electronics, RF components, and optoelectronics. The market was valued at USD 20.56 billion in 2019 and is projected to reach USD 39.74 billion by 2032, growing at a compound annual growth rate (CAGR) of 5.20% over the forecast period. North America accounted for the largest market share in 2019, supported by robust investments in advanced technologies and strong presence of key industry players.

Information Source:

https://www.fortunebusinessinsights.com/gallium-nitride-gan-devices-market-103367

A list of all the prominent Gallium Nitride Device Market Key Players:

• Infineon Technologies AG (Germany)
• Efficient Power Conversion Corporation. (The U.S.)
• EPISTAR Corporation (Taiwan)
• GaN Systems (Canada)
• MACOM (The U.S.)
• Microsemi (The U.S.)
• Mitsubishi Electric Corporation (Japan)
• NICHIA CORPORATION (Japan)
• Northrop Grumman Corporation (The U.S.)
• NXP Semiconductors. (Netherland)
• Qorvo, Inc (The U.S.)
• Texas Instruments Incorporated. (The U.S.)
• Toshiba Corporation (Japan)