The global gallium nitride device market was valued at USD 20.56 billion in 2019 and is expected to grow from USD 21.18 billion in 2020 to USD 39.74 billion by 2032, registering a CAGR of 5.20% during the 2020–2032 period.

This growth is driven by the increasing demand for high-efficiency, high-performance electronic devices across sectors such as telecommunications, automotive, aerospace, and consumer electronics. Gallium nitride devices offer advantages such as higher power density, faster switching speeds, and improved thermal performance compared to traditional silicon-based devices. In 2019, North America held the largest market share at 35.89%, supported by strong R&D activities and early adoption of advanced semiconductor technologies.

A list of all the prominent Gallium Nitride Device Market Key Players:

• Infineon Technologies AG (Germany)
• Efficient Power Conversion Corporation. (The U.S.)
• EPISTAR Corporation (Taiwan)
• GaN Systems (Canada)
• MACOM (The U.S.)
• Microsemi (The U.S.)
• Mitsubishi Electric Corporation (Japan)
• NICHIA CORPORATION (Japan)
• Northrop Grumman Corporation (The U.S.)
• NXP Semiconductors. (Netherland)
• Qorvo, Inc (The U.S.)
• Texas Instruments Incorporated. (The U.S.)
• Toshiba Corporation (Japan)

Information Source:

https://www.fortunebusinessinsights.com/gallium-nitride-gan-devices-market-103367