The global gallium nitride device market was valued at USD 20.56 billion in 2019 and is expected to grow from USD 21.18 billion in 2020 to USD 39.74 billion by 2032, reflecting a CAGR of 5.20% during the 2020-2032 period. In 2019, North America led the market, holding a dominant share of 35.89%.

The global gallium nitride device market is experiencing steady growth due to increasing demand across industries such as telecommunications, automotive, and consumer electronics. GaN devices offer high efficiency, faster switching speeds, and improved thermal performance compared to traditional silicon-based components. Market expansion is driven by advancements in 5G technology, electric vehicles, and power electronics. North America holds a significant market share, with ongoing research and development efforts further fueling innovation. The market is expected to grow consistently, supported by rising investments in semiconductor technology.

A list of all the prominent Gallium Nitride Device Market Key Players:

• Infineon Technologies AG (Germany)
• Efficient Power Conversion Corporation. (The U.S.)
• EPISTAR Corporation (Taiwan)
• GaN Systems (Canada)
• MACOM (The U.S.)
• Microsemi (The U.S.)
• Mitsubishi Electric Corporation (Japan)
• NICHIA CORPORATION (Japan)
• Northrop Grumman Corporation (The U.S.)
• NXP Semiconductors. (Netherland)
• Qorvo, Inc (The U.S.)
• Texas Instruments Incorporated. (The U.S.)
• Toshiba Corporation (Japan)

Information Source:

https://www.fortunebusinessinsights.com/gallium-nitride-gan-devices-market-103367